Sol-gel bonding of silicon wafers: Part 2. Influence of the sol-gel chemistry on bond morphology and interfacial energy

C J Barbé; D J Cassidy; G Triani; B A Latella; D R G Mitchell; K S Finnie; John R Bartlett; J L Woolfrey; G A Collins

doi:10.1016/j.tsf.2005.04.109

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Sol-gel bonding of silicon wafers: Part 2. Influence of the sol-gel chemistry on bond morphology and interfacial energy

Journal article

Peer reviewed

Sol-gel bonding of silicon wafers: Part 2. Influence of the sol-gel chemistry on bond morphology and interfacial energy

C J Barbé, D J Cassidy, G Triani, B A Latella, D R G Mitchell, K S Finnie, John R Bartlett, J L Woolfrey and G A Collins

Thin Solid Films, Vol.488(1-2), pp.160-166

2005

DOI: https://doi.org/10.1016/j.tsf.2005.04.109

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Abstract

Physical Sciences

Engineering

Technology

sol-gel

silicon wafer

bond morphology

interfacial energy

Low temperature bonding of silicon wafers was achieved using sol-gel technology. The initial sol-gel chemistry of the coating solution was found to influence the mechanical properties of the resulting bonds. More precisely, the influence of parameters such as the alkoxide concentration, water-to-alkoxide molar ratio, pH, and solution aging on the final bond morphologies and interfacial fracture energy was studied. The thickness and density of the sol-gel coating were characterised using ellipsometry. The corresponding bonded specimens were investigated using attenuated total reflectance Fourier transformed infrared spectroscopy to monitor their chemical composition, infrared imaging to control bond integrity, and cross-sectional transmission electron microscopy to study their microstructure. Their interfacial fracture energy was measured using microindentation. An optimum water-to-alkoxide molar ratio of 10 and hydrolysis water at pH = 2 were found. Such conditions led to relatively dense films (> 90%), resulting in bonds with a fracture energy of 3.5 J/m2, significantly higher than those obtained using classical hydrophilic bonding (typically 1.5-2.5 J/m2). Ageing of the coating solution was found to decrease the bond strength.

Details

Title: Sol-gel bonding of silicon wafers: Part 2. Influence of the sol-gel chemistry on bond morphology and interfacial energy
Authors: C J Barbé (Author) - Australian Nuclear Science and Technology Organisation
D J Cassidy (Author) - Australian Nuclear Science and Technology Organisation
G Triani (Author) - Australian Nuclear Science and Technology Organisation
B A Latella (Author) - Australian Nuclear Science and Technology Organisation
D R G Mitchell (Author) - Australian Nuclear Science and Technology Organisation
K S Finnie (Author) - Australian Nuclear Science and Technology Organisation
John R Bartlett (Author) - Australian Nuclear Science and Technology Organisation
J L Woolfrey (Author) - Australian Nuclear Science and Technology Organisation
G A Collins (Author) - Australian Nuclear Science and Technology Organisation
Publication details: Thin Solid Films, Vol.488(1-2), pp.160-166
Publisher: Elsevier S.A.
Date published: 2005
DOI: 10.1016/j.tsf.2005.04.109
ISSN: 0040-6090
Organisation Unit: School of Science and Engineering - Legacy; University of the Sunshine Coast, Queensland
Language: English
Record Identifier: 99449091302621
Output Type: Journal article

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Web Of Science research areas: Materials Science, Coatings & Films; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter