Sol-gel bonding of silicon wafers: Part 1: Influence of the processing temperature on final bond morphology and interfacial energy

C J Barbé; D J Cassidy; G Triani; B A Latella; D R G Mitchell; K S Finnie; K Short; John R Bartlett; J L Woolfrey; G A Collins

doi:10.1016/j.tsf.2005.04.108

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Sol-gel bonding of silicon wafers: Part 1: Influence of the processing temperature on final bond morphology and interfacial energy

Journal article

Peer reviewed

Sol-gel bonding of silicon wafers: Part 1: Influence of the processing temperature on final bond morphology and interfacial energy

C J Barbé, D J Cassidy, G Triani, B A Latella, D R G Mitchell, K S Finnie, K Short, John R Bartlett, J L Woolfrey and G A Collins

Thin Solid Films, Vol.488(1-2), pp.153-159

2005

DOI: https://doi.org/10.1016/j.tsf.2005.04.108

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Abstract

Physical Sciences

Engineering

Technology

Sol-gel bonds have been produced between smooth, clean silicon substrates by spin-coating solutions containing partially hydrolysed silicon alkoxides. The two coated substrates were assembled and the resulting sandwich fired at temperatures ranging from 60 to 600°C. The sol-gel coatings were characterised using attenuated total reflectance Fourier transform infrared spectroscopy, ellipsometry, and atomic force microscopy, while the corresponding bonded specimens were investigated using scanning electron microscopy and cross-sectional transmission electron microscopy. Mechanical properties were characterised using both microindentation and tensile testing. Bonding of silicon wafers has been successfully achieved at temperatures as low as 60°C. At 300°C, the interfacial fracture energy was 1.55 J/m 2. At 600°C, sol-gel bonding provided superior interfacial fracture energy over classical hydrophilic bonding (3.4 J/m2 vs. 1.5 J/m2). The increase in the interfacial fracture energy is related to the increase in film density due to the sintering of the sol-gel interface with increasing temperature. The superior interfacial fracture energy obtained by sol-gel bonding at low temperature is due to the formation of an interfacial layer, which chemically bonds the two sol-gel coatings on each wafer. Application of a tensile stress on the resulting bond leads to fracture of the samples at the silicon/sol-gel interface.

Details

Title: Sol-gel bonding of silicon wafers: Part 1: Influence of the processing temperature on final bond morphology and interfacial energy
Authors: C J Barbé (Author) - Australian Nuclear Science and Technology Organisation
D J Cassidy (Author) - Australian Nuclear Science and Technology Organisation
G Triani (Author) - Australian Nuclear Science and Technology Organisation
B A Latella (Author) - Australian Nuclear Science and Technology Organisation
D R G Mitchell (Author) - Australian Nuclear Science and Technology Organisation
K S Finnie (Author) - Australian Nuclear Science and Technology Organisation
K Short (Author) - Australian Nuclear Science and Technology Organisation
John R Bartlett (Author) - Australian Nuclear Science and Technology Organisation
J L Woolfrey (Author) - Australian Nuclear Science and Technology Organisation
G A Collins (Author) - Australian Nuclear Science and Technology Organisation
Publication details: Thin Solid Films, Vol.488(1-2), pp.153-159
Publisher: Elsevier S.A.
Date published: 2005
DOI: 10.1016/j.tsf.2005.04.108
ISSN: 0040-6090
Organisation Unit: School of Science and Engineering - Legacy; University of the Sunshine Coast, Queensland
Language: English
Record Identifier: 99448626602621
Output Type: Journal article

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Web Of Science research areas: Materials Science, Coatings & Films; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter