Optical and electrical properties of nitrogen ion implanted fluorine doped tin oxide films

Tuquabo Tesfamichael; Geoffrey Will; Michael Colella; John Bell

doi:10.1016/S0168-583X(02)02226-7

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Optical and electrical properties of nitrogen ion implanted fluorine doped tin oxide films

Journal article

Peer reviewed

Optical and electrical properties of nitrogen ion implanted fluorine doped tin oxide films

Tuquabo Tesfamichael, Geoffrey Will, Michael Colella and John Bell

Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol.201(4), pp.581-588

2003

DOI: https://doi.org/10.1016/S0168-583X(02)02226-7

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Abstract

tin oxide

ion implantation

microstructure

optical properties

electrical properties

Tin oxide films were implanted with N+ at various energies between 5 and 40 keV for different ion doses between 10 14 and 10 16 cm −2. The microstructure, optical and electrical properties of the films were investigated. From transmission electron microscopy the implanted films were shown to be amorphous. The implanted thickness for the 10 and 40 keV were found to be 30 and 110 nm, respectively. The ion penetration depths for these films were calculated using SRIM-2000 and found to be 35 nm (at 10 keV) and 120 nm (at 40 keV). The optical properties of the implanted films were measured and transmittance was found to decrease with increasing implantation energy and/or ion dose. The luminous transmittance of the films decreased from 0.70 for the unimplanted film to about 0.57 for the highest implantation energy and largest ion dose. By annealing the films large part of the defects have been removed and thereby increasing the transmittance of the films. The electrical properties of the films were investigated and found an increase of sheet resistance with increasing implantation energy and/or ion dose. The increase of sheet resistance after ion implantation is caused by a loss of crystallinity of the tin oxide films. After annealing the sheet resistance decreases because the crystallinity was partially recovered.

Details

Title: Optical and electrical properties of nitrogen ion implanted fluorine doped tin oxide films
Authors: Tuquabo Tesfamichael (Corresponding Author) - Queensland University of Technology
Geoffrey Will (Author) - Queensland University of Technology
Michael Colella (Author) - Australian Nuclear Science and Technology Organisation
John Bell (Author) - Queensland University of Technology
Publication details: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol.201(4), pp.581-588
Publisher: Elsevier BV
DOI: 10.1016/S0168-583X(02)02226-7
ISSN: 1872-9584
Organisation Unit: School of Science, Technology and Engineering
Language: English
Record Identifier: 99737992802621
Output Type: Journal article

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Collaboration types: Domestic collaboration
Web Of Science research areas: Instruments & Instrumentation; Nuclear Science & Technology; Physics, Atomic, Molecular & Chemical; Physics, Nuclear

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