Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs2InBiBr6 Based Double Perovskite Solar Cells

Guolong Meng; Naveen Elumalai; Hooman Mehdizadeh-Rad; Kiran Sreedhar Ram; Daniel Dodzi Yao Setsoafia; David Ompong

doi:10.1002/adts.202300784

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Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs2InBiBr6 Based Double Perovskite Solar Cells

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Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs2InBiBr6 Based Double Perovskite Solar Cells

Guolong Meng, Naveen Elumalai, Hooman Mehdizadeh-Rad, Kiran Sreedhar Ram, Daniel Dodzi Yao Setsoafia and David Ompong

Advanced Theory and Simulations, Vol.7(2), pp.1-13

2024

DOI: https://doi.org/10.1002/adts.202300784

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Abstract

double perovskite solar cell

interface

lead-free

SCAPS-1D

stability

Perovskite solar cells, a third-generation photovoltaic technology, have recently emerged as a game-changing innovation. However, lead (Pb) is a toxic heavy metal, and it is crucial to explore lead-free perovskite solar cells with continuously improving efficiency for long-term development. Recently, materials researchers have discovered a lead-free double perovskite solar cell material, Cs2InBiBr6 with a small direct bandgap of 1.27 eV and strong thermodynamic and mechanical structural stability. The power conversion efficiency of Cs2InBiBr6-based perovskite solar cells is not reported yet. To investigate its potential, a solar cell capacitance simulator to analyze the solar cell structure of FTO (Fluorine Doped Tin Oxide)/ETL (Electron Transport Layer)/Cs2InBiBr6/HTL (Hole Transport Layer)/Au, selecting appropriate hole transport materials and electron transmission materials to achieve high efficiency is used. Moreover, this study explores the impact of several factors, including absorber layer thickness, acceptor and donor doping density, and the influence of total defect density of the perovskite and interface layers on the performance of solar cells. Advanced device characterization methods such as Mott-Schottky analysis are performed to unravel the effect of interfaces on the device performance. The solar cell with the device structure FTO/TiO2/Cs2InBiBr6/Cu2O/Au achieves an outstanding PCE of 23.64% demonstrating the immense potential of Cs2InBiBr6 as a lead-free double perovskite solar cell absorber layer.

Details

Title: Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs2InBiBr6 Based Double Perovskite Solar Cells
Authors: Guolong Meng - Charles Darwin University
Naveen Elumalai (Corresponding Author) - Charles Darwin University
Hooman Mehdizadeh-Rad - Charles Darwin University
Kiran Sreedhar Ram - Charles Darwin University
Daniel Dodzi Yao Setsoafia - Charles Darwin University
David Ompong - Charles Darwin University
Publication details: Advanced Theory and Simulations, Vol.7(2), pp.1-13
Publisher: Wiley-VCH Verlag GmbH & Co. KGaA
Date published: 2024
DOI: 10.1002/adts.202300784
ISSN: 2513-0390
Copyright note: © 2023 The Authors. Advanced Theory and Simulations published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.
Data Availability: The data that support the findings of this study are available from the corresponding author upon reasonable request.
Grant note: The authors thankfully acknowledge Dr. Marc Burgelman of the University of Gent in Belgium for generously providing the SCAPS simulation program.
Organisation Unit: School of Science, Technology and Engineering
Language: English
Record Identifier: 991216649902621
Output Type: Journal article

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