Strip-based watershed using multiple-bank memory storage

L S Yeong; Li-Minn Ang; K P Seng

doi:10.1109/COMPSYM.2010.5685450

Back

Strip-based watershed using multiple-bank memory storage

Conference paper

Peer reviewed

Strip-based watershed using multiple-bank memory storage

L S Yeong, Li-Minn Ang and K P Seng

Proceedings of the 2010 International Computer Symposium, ICS 2010, pp.553-556

International Computer Symposium (ICS2010), 2010 (Tainan, Taiwan, 16-Dec-2010–18-Dec-2010)

Institute of Electrical and Electronics Engineers

2010

DOI: https://doi.org/10.1109/COMPSYM.2010.5685450

Files and links (1)

url

https://doi.org/10.1109/COMPSYM.2010.5685450View

Published Version

Abstract

Multibank memory

Single-pass watershed

Strip-based

Memory banks

Memory storage

In this paper we propose a single-pass strip-based watershed segmentation using multibank memory. This watershed segmentation is based on rainfall simulation and is targeted for low memory applications whereby only a small amount of memory is needed for processing at any one time. Using multiple memory banks for storage also ensures that clock cycles for memory accesses are kept to a minimum.

Details

Title: Strip-based watershed using multiple-bank memory storage
Authors: L S Yeong (Author) - University of Nottingham Malaysia Campus
Li-Minn Ang (Author) - University of Nottingham Malaysia Campus
K P Seng (Author) - University of Nottingham Malaysia Campus
Publication details: Proceedings of the 2010 International Computer Symposium, ICS 2010, pp.553-556
Conference details: International Computer Symposium (ICS2010), 2010 (Tainan, Taiwan, 16-Dec-2010–18-Dec-2010)
Publisher: Institute of Electrical and Electronics Engineers
Date published: 2010
DOI: 10.1109/COMPSYM.2010.5685450
ISBN: 9781424476398
Organisation Unit: School of Science, Technology and Engineering; Engage Research Lab
Language: English
Record Identifier: 99513800202621
Output Type: Conference paper

Metrics

19 Record Views