Influence of Trap Depth on Charge Transport in Inverted Bulk Heterojunction Solar Cells employing ZnO as electron transport layer

Naveen Elumalai; Chellappan Vijila; Arthi Sridhar; Seeram Ramakrishna

doi:10.1109/INEC.2013.6466043

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Influence of Trap Depth on Charge Transport in Inverted Bulk Heterojunction Solar Cells employing ZnO as electron transport layer

Conference paper

Peer reviewed

Influence of Trap Depth on Charge Transport in Inverted Bulk Heterojunction Solar Cells employing ZnO as electron transport layer

Naveen Elumalai, Chellappan Vijila, Arthi Sridhar and Seeram Ramakrishna

Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference (INEC), pp.1-4

IEEE International Nanoelectronics Conference (INEC), 5th (Singapore, 02-Jan-2013–04-Jan-2013)

Institute of Electrical and Electronics Engineers

2013

DOI: https://doi.org/10.1109/INEC.2013.6466043

Abstract

zinc oxide

trap depth

temperature dependence

electron selective layer

solution processed

Inverted organic solar cells with device structure ITO/ZnO/poly(3- hexylthiophene) (P3HT): [6,6[-phenyl C61 butyric acid methyl ester (PCBM) /MoO3/Ag were fabricated employing low temperature solution processed ZnO as electron selective layer. Devices with varying film thickness of ZnO interlayer were investigated. The optimum film thickness was determined from photovoltaic parameters obtained from current-voltage measurements. The type of charge transport process, distribution of trap states and the ohmicity of the contacts in the optimized device were evaluated using the temperature and illumination intensity dependent study. The results demonstrate the effect of trap depth on device performance and its distribution on the stability of contacts.

Details

Title: Influence of Trap Depth on Charge Transport in Inverted Bulk Heterojunction Solar Cells employing ZnO as electron transport layer
Authors: Naveen Elumalai - Institute of Materials Research and Engineering
Chellappan Vijila - Agency for Science, Technology and Research
Arthi Sridhar - National University of Singapore
Seeram Ramakrishna - National University of Singapore
Publication details: Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference (INEC), pp.1-4
Conference details: IEEE International Nanoelectronics Conference (INEC), 5th (Singapore, 02-Jan-2013–04-Jan-2013)
Publisher: Institute of Electrical and Electronics Engineers
Date published: 2013
DOI: 10.1109/INEC.2013.6466043
ISSN: 2159-3531
Organisation Unit: School of Science, Technology and Engineering
Language: English
Record Identifier: 991224726602621
Output Type: Conference paper

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